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TPS3779DDRYR Fiches technique(PDF) 2 Page - Texas Instruments

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No de pièce TPS3779DDRYR
Description  Low-Power, Dual-Voltage Detector in Small SON Package
Download  17 Pages
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

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TPS3779
TPS3780
SBVS216B – SEPTEMBER 2012 – REVISED MAY 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DEVICE INFORMATION
PRODUCT
HYSTERESIS (%)
OUTPUT
TPS3779A
0.5
Push-pull
TPS3779B
5
Push-pull
TPS3779C
10
Push-pull
TPS3779D
1
Push-pull
TPS3780A
0.5
Open-drain
TPS3780B
5
Open-drain
TPS3780C
10
Open-drain
TPS3780D
1
Open-drain
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
VALUE
UNIT
VCC
–0.3 to +7
V
Voltage(2)
OUT1, OUT2
–0.3 to +7
V
SENSE1, SENSE2
–0.3 to +7
V
Current
OUT pin
±20
mA
Operating junction, TJ
–40 to +125
°C
Temperature(3)
Storage, Tstg
–65 to +150
°C
Human body model (HBM)
2
kV
Electrostatic discharge
(ESD) ratings
Charge device model (CDM)
500
V
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute
maximum- rated conditions for extended periods my affect device reliability.
(2)
All voltages are with respect to the network ground terminal.
(3)
As a result of the low dissipated power in this device, it is assumed that TJ = TA.
THERMAL INFORMATION
TPS3779
TPS3780
THERMAL METRIC(1)
UNITS
DRY (µSON)
6 PINS
θJA
Junction-to-ambient thermal resistance
306.7
θJCtop
Junction-to-case (top) thermal resistance
174.1
θJB
Junction-to-board thermal resistance
173.4
°C/W
ψJT
Junction-to-top characterization parameter
30.9
ψJB
Junction-to-board characterization parameter
171.6
θJCbot
Junction-to-case (bottom) thermal resistance
65.2
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
2
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Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: TPS3779 TPS3780


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