IRFWI510A datasheet(3/7 Pages) FAIRCHILD

No de pièce	IRFWI510A

Description	Advanced Power MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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3 / 7 page

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source Voltage

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward Voltage

Fig 3. On-Resistance vs. Drain Current

IRFW/I510A

10

-1

10

0

10

1

10

-1

10

0

10

1

@ Notes :

1. 250

µs Pulse Test

2. T

C

= 25

oC

V

GS

Top :

15V

10 V

8.0 V

7.0 V

6.0 V

5.5V

5.0 V

Bottom : 4.5 V

V

DS

, Drain-Source Voltage [V]

2

4

6

8

10

-1

10

0

10

1

25

oC

175

oC

- 55

oC

@ Notes :

1. V

GS

= 0 V

2. V

DS

= 40 V

3. 250

µs Pulse Test

V

GS

, Gate-Source Voltage [V]

0

5

10

15

20

0.0

0.2

0.4

0.6

0.8

@ Note : T

J

= 25

oC

V

GS

= 20 V

V

GS

= 10 V

I

D

, Drain Current [A]

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10

-1

10

0

10

1

175

oC

25

oC

@ Notes :

1. V

GS

= 0 V

2. 250

µs Pulse Test

V

SD

, Source-Drain Voltage [V]

10

0

10

1

0

70

140

210

280

350

C

iss= Cgs+ Cgd ( Cds= shorted )

C

oss

= C

ds

+ C

gd

C

rss= Cgd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

0

2

4

6

8

10

0

5

10

V

DS

= 80 V

V

DS

= 50 V

V

DS = 20 V

@ Notes : I

D = 5.6 A

Q

G

, Total Gate Charge [nC]

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