STF9NM60N datasheet(5/16 Pages) STMICROELECTRONICS

No de pièce	STF9NM60N

Description	N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

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STD9NM60N, STF9NM60N, STP9NM60N

Electrical characteristics

Doc ID 18063 Rev 1

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Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 480 V, ID = 6.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 17)

-

28

23

52.5

26.7

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

6.5

26

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 6.5 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 6.5 A, di/dt = 100 A/µs

VDD = 60 V

(see Figure 22)

-

264

1.9

14.6

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 6.5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

-

324

2.3

14.2

ns

µC

A

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