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SI2318DS Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI2318DS
Description  N-Channel 40-V (D-S) MOSFET
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SI2318DS Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
Vishay Siliconix
Si2318DS
Notes:
a. Pulse test; PW
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 µA
40
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
13
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 32 V, VGS = 0 V
0.5
µA
VDS = 32 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 4.5 V, VGS = 10 V
6A
Drain-Source On-Resistancea
RDS(on)
VGS = 10 V, ID = 3.9 A
0.036
0.045
Ω
VGS = 4.5 V, ID = 3.5 A
0.045
0.058
Forward Transconductancea
gfs
VDS = 10 V, ID = 3.9 A
11
S
Diode Forward Voltage
VSD
IS = 1.25 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 20 V, VGS = 10 V, ID = 3.9 A
10
15
nC
Gate-Source Charge
Qgs
1.6
Gate-Drain Charge
Qgd
2.1
Gate Resistance
Rg
1.8
Ω
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
540
pF
Output Capacitance
Coss
80
Reverse Transfer Capacitance
Crss
45
Switching
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 20 Ω
ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω
510
ns
Rise Time
tr
12
20
Turn-Off Delay Time
td(off)
20
30
Fall Time
tf
15
25
Output Characteristics
0
4
8
12
16
20
02468
10
VGS = 10 V thru 5 V
4 V
V
- Drain-to-Source Voltage (V)
DS
3 V
1 V, 2 V
Transfer Characteristics
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TC = 125 °C
25 °C
VGS - Gate-to-Source Voltage (V)
- 55 °C


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