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SI2318DS Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI2318DS Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 72322 S09-0130-Rev. B, 02-Feb-09 Vishay Siliconix Si2318DS Notes: a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 40 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V 0.5 µA VDS = 32 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 4.5 V, VGS = 10 V 6A Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 3.9 A 0.036 0.045 Ω VGS = 4.5 V, ID = 3.5 A 0.045 0.058 Forward Transconductancea gfs VDS = 10 V, ID = 3.9 A 11 S Diode Forward Voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 3.9 A 10 15 nC Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd 2.1 Gate Resistance Rg 1.8 Ω Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz 540 pF Output Capacitance Coss 80 Reverse Transfer Capacitance Crss 45 Switching Turn-On Delay Time td(on) VDD = 20 V, RL = 20 Ω ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω 510 ns Rise Time tr 12 20 Turn-Off Delay Time td(off) 20 30 Fall Time tf 15 25 Output Characteristics 0 4 8 12 16 20 02468 10 VGS = 10 V thru 5 V 4 V V - Drain-to-Source Voltage (V) DS 3 V 1 V, 2 V Transfer Characteristics 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TC = 125 °C 25 °C VGS - Gate-to-Source Voltage (V) - 55 °C |
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