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SI2308BDS Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI2308BDS Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 69958 S-83053-Rev. B, 29-Dec-08 www.vishay.com 3 Vishay Siliconix Si2308BDS New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 10 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS =10thru 5 V VGS =2 V VGS =3 V VGS =4 V 0.06 0.12 0.18 0.24 0.30 02 4 6 8 10 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 0 1234 5 ID =1.9 A Qg - Total Gate Charge (nC) VDS =48V VDS =30 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 0.0 0.7 1.4 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) TC = 125 °C TC =25 °C TC = - 55 °C Crss 0 60 120 180 240 300 0 102030 405060 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =10 V,ID =1.9 A VGS =4.5 V,ID =1.7 A |
Numéro de pièce similaire - SI2308BDS_13 |
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Description similaire - SI2308BDS_13 |
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