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BZX585-B3V9 Fiches technique(PDF) 5 Page - NXP Semiconductors |
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BZX585-B3V9 Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 10 page Table 1 Per type BZX585-B/C2V4 to B/C24 Tamb = 25 °C unless otherwise specified. BZX585- B or C XXX WORKING VOLTAGE VZ (V) at IZtest = 5 mA DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see figs 3 AND 4) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs Tol. ± 2% (B) Tol. ± 5% (C) at IZtest = 1 mA at IZtest = 5 mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX. 2V4 2.35 2.45 2.28 2.52 275 400 70 100 −1.3 450 6.0 2V7 2.65 2.75 2.57 2.84 300 450 75 100 −1.4 440 6.0 3V0 2.94 3.06 2.85 3.15 325 500 80 95 −1.6 425 6.0 3V3 3.23 3.37 3.14 3.47 350 500 85 95 −1.8 410 6.0 3V6 3.53 3.67 3.42 3.78 375 500 85 90 −1.9 390 6.0 3V9 3.82 3.98 3.71 4.10 400 500 85 90 −1.9 370 6.0 4V3 4.21 4.39 4.09 4.52 410 600 80 90 −1.7 350 6.0 4V7 4.61 4.79 4.47 4.94 425 500 50 80 −1.2 325 6.0 5V1 5.00 5.20 4.85 5.36 400 480 40 60 −0.5 300 6.0 5V6 5.49 5.71 5.32 5.88 80 400 15 40 1.0 275 6.0 6V2 6.08 6.32 5.89 6.51 40 150 6 10 2.2 250 6.0 6V8 6.66 6.94 6.46 7.14 30 80 6 15 3.0 215 6.0 7V5 7.35 7.65 7.13 7.88 15 80 2 10 3.6 170 4.0 8V2 8.04 8.36 7.79 8.61 20 80 2 10 4.3 150 4.0 9V1 8.92 9.28 8.65 9.56 20 100 2 10 5.2 120 3.0 10 9.80 10.20 9.50 10.50 20 150 2 10 6.0 110 3.0 11 10.78 11.22 10.45 11.55 25 150 2 10 6.9 110 2.5 12 11.76 12.24 11.40 12.60 25 150 2 10 7.9 105 2.5 13 12.74 13.26 12.35 13.65 25 170 2 10 8.8 105 2.5 15 14.70 15.30 14.25 15.75 25 200 3 15 10.7 100 2.0 16 15.68 16.32 15.20 16.80 50 200 10 40 12.4 90 1.5 18 17.64 18.36 17.10 18.90 50 225 10 45 14.4 80 1.5 20 19.60 20.40 19.00 21.00 60 225 15 55 16.4 70 1.5 22 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25 24 23.52 24.48 22.80 25.20 60 250 25 70 20.4 55 1.25 |
Numéro de pièce similaire - BZX585-B3V9 |
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Description similaire - BZX585-B3V9 |
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