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BAT54C.215 Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BAT54C.215 Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 11 page 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Low forward voltage Low capacitance AEC-Q101 qualified 1.3 Applications 1.4 Quick reference data [1] Pulse test: tp 300 s; 0.02. 2. Pinning information BAT54 series Schottky barrier diodes Rev. 5 — 5 October 2012 Product data sheet Ultra high-speed switching Voltage clamping Line termination Reverse polarity protection Table 1. Quick reference data Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VR reverse voltage - - 30 V VF forward voltage IF =100 mA [1] -- 800 mV IR reverse current VR =25V [1] -- 2 A Table 2. Pinning Pin Description Simplified outline Graphic symbol BAT54 1 anode 2 not connected 3 cathode 12 3 006aaa436 1 3 2 n.c. |
Numéro de pièce similaire - BAT54C.215 |
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Description similaire - BAT54C.215 |
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