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BAT54CW Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BAT54CW Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 11 page BAT54W_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 — 20 November 2012 4 of 11 NXP Semiconductors BAT54W series Schottky barrier diodes 7. Characteristics [1] Pulse test: tp 300 s; 0.02. [2] When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA. Table 7. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage [1] IF = 0.1 mA - - 240 mV IF = 1 mA - - 320 mV IF = 10 mA - - 400 mV IF = 30 mA - - 500 mV IF = 100 mA - - 800 mV IR reverse current VR =25V [1] --2 A Cd diode capacitance f = 1 MHz; VR = 1 V --10 pF trr reverse recovery time [2] --5 ns (1) Tamb = 125 C (2) Tamb =85 C (3) Tamb =25 C (1) Tamb = 125 C (2) Tamb =85 C (3) Tamb =25 C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values 006aac829 VF (V) 0.0 1.2 0.8 0.4 1 10 102 103 IF (mA) 10-1 (1) (1) (2) (2) (3) (3) DDD 95 9 ,5 $ |
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