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HGTG7N60A4D Fiches technique(PDF) 4 Page - Fairchild Semiconductor

No de pièce HGTG7N60A4D
Description  600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HGTG7N60A4D Fiches technique(HTML) 4 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
01.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
1.5
2.0
3.0
25
20
TJ = 125
oC
TJ = 150
oC
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%, VGE = 12V
30
TJ = 25
oC
0.5
2.5
15
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250
µs
TJ = 150
oC
TJ = 25
oC
0
5
10
25
20
30
15
0
1.0
1.5
2.0
3.0
0.5
2.5
TJ = 125
oC
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
400
0
4
2
6
8
101214
TJ = 125
oC, V
GE = 12V, VGE = 15V
RG = 25Ω, L = 1mH, VCE = 390V
TJ = 25
oC, V
GE = 12V, VGE = 15V
100
0
500
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
200
100
250
350
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 125
oC, V
GE = 12V OR 15V
150
RG = 25Ω, L = 1mH, VCE = 390V
4
2
6
8
101214
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
14
16
TJ = 125
oC, V
GE = 15V
RG = 25Ω, L = 1mH, VCE = 390V
12
10
TJ = 25
oC, V
GE = 15V
TJ = 125
oC, V
GE = 12V
TJ = 25
oC, V
GE = 12V
4
26
8
10
12
14
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
10
40
30
RG = 25Ω, L = 1mH, VCE = 390V
TJ = 25
oC, V
GE = 12V, VGE = 15V
TJ = 125
oC, V
GE = 12V, VGE = 15V
4
2
6
8
101214
0
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS


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