STB18NM80 datasheet(4/21 Pages) STMICROELECTRONICS

No de pièce	STB18NM80

Description	N-channel 800 V, 0.25 廓, 17 A, MDmes Power MOSFET

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Electrical characteristics

STB18NM80, STF18NM80, STP18NM80, STW18NM80

4/21

Doc ID 15421 Rev 5

2

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

800

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800 V,

VDS = 800 V,Tc = 125 °C

10

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 30 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 8.5 A

0.25

0.295

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID= 8.5 A

-

14

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-

2070

210

29

-

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 640 V

-

316

-

pF

RG

Gate input resistance

f = 1 MHz Gate DC Bias = 0

Test Signal Level = 20 mV

Open Drain

-4

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 640 V, ID = 17 A

VGS = 10 V

(see Figure 17)

-

70

13

40

-

nC

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