Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

FDD86326 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce FDD86326
Description  N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD86326 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

  FDD86326 Datasheet HTML 1Page - Fairchild Semiconductor FDD86326 Datasheet HTML 2Page - Fairchild Semiconductor FDD86326 Datasheet HTML 3Page - Fairchild Semiconductor FDD86326 Datasheet HTML 4Page - Fairchild Semiconductor FDD86326 Datasheet HTML 5Page - Fairchild Semiconductor FDD86326 Datasheet HTML 6Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C2
www.fairchildsemi.com
1
May 2013
FDD86326
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 37 A, 23 m
:
Features
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 23 m: at VGS = 10 V, ID = 8 A
„ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Very low Qg and Qgd compared to competing trench
technologies
„ Fast switching speed
„ 100% UIL tested
„ RoHS Compliant
General Description
This
N-Channel
MOSFET
is
produced
using
Fairchild
Semiconductor‘s
advanced
PowerTrench®
process
that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Application
„ DC - DC Conversion
MOSFET Maximum Ratings T
C = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
80
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current -Continuous
TC = 25 °C
37
A
-Continuous
TA = 25 °C
(Note 1a)
8
-Pulsed
40
EAS
Single Pulse Avalanche Energy
(Note 3)
121
mJ
PD
Power Dissipation
TC = 25 °C
62
W
Power Dissipation
TA = 25 °C
(Note 1a)
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RTJC
Thermal Resistance, Junction to Case
2.0
°C/W
RTJA
Thermal Resistance, Junction to Ambient
(Note 1a)
40
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD86326
FDD86326
D-PAK(TO-252)
13 ’’
12 mm
2500 units
G
S
D
TO -2 52
D-P A K
(T O -25 2)
D
G
S


Numéro de pièce similaire - FDD86326

FabricantNo de pièceFiches techniqueDescription
logo
Inchange Semiconductor ...
FDD86326 ISC-FDD86326 Datasheet
351Kb / 2P
   isc N-Channel MOSFET Transistor
More results


Html Pages

1 2 3 4 5 6


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com