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FDD86326 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDD86326 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 www.fairchildsemi.com 1 May 2013 FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 m : Features Shielded Gate MOSFET Technology Max rDS(on) = 23 m: at VGS = 10 V, ID = 8 A Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Application DC - DC Conversion MOSFET Maximum Ratings T C = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous TC = 25 °C 37 A -Continuous TA = 25 °C (Note 1a) 8 -Pulsed 40 EAS Single Pulse Avalanche Energy (Note 3) 121 mJ PD Power Dissipation TC = 25 °C 62 W Power Dissipation TA = 25 °C (Note 1a) 3.1 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RTJC Thermal Resistance, Junction to Case 2.0 °C/W RTJA Thermal Resistance, Junction to Ambient (Note 1a) 40 Device Marking Device Package Reel Size Tape Width Quantity FDD86326 FDD86326 D-PAK(TO-252) 13 ’’ 12 mm 2500 units G S D TO -2 52 D-P A K (T O -25 2) D G S |
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