2SD1760TLQ datasheet(1/3 Pages) ROHM

No de pièce	2SD1760TLQ

Description	Epitaxial planar type NPN silicon transistor

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Fabricant	ROHM [Rohm]

Site Internet	http://www.rohm.com

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2SD1760 / 2SD1864

Transistors

Power Transistor (50V, 3A)

2SD1760 / 2SD1864

!

Features

1) Low VCE(sat).

VCE(sat) = 0.5V (Typ.)

(IC/IB = 2A / 0.2A)

2) Complements the 2SB1184 / 2SB1243.

!

Structure

Epitaxial planar type

NPN silicon transistor

!

External dimensions (Units : mm)

(1) Base

(2) Collector

(3) Emitter

(1) Emitter

(2) Collector

(3) Base

ROHM : CPT3

EIAJ : SC-63

ROHM : ATV

6.8

±0.2

2.5

±0.2

1.05

0.45

±0.1

2.54 2.54

0.5

±0.1

(1)

(2)

(3)

0.65Max.

2SD1760

2SD1864

−0.1

+0.2

−0.1

+0.2

2.3

±0.2

2.3

±0.2

0.65

±0.1

0.9

0.75

1.0

±0.2

0.55

±0.1

2.3

0.5

±0.1

6.5

±0.2

5.1

C0.5

(3)

(2)

(1)

!

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

VCBO

60

V

VCEO

50

V

VEBO

5V

IC

3

A (DC)

4.5

A (Pulse) ∗

1

Tj

150

°C

Tstg

−55~+150

°C

2SD1864

2SD1760

1

15

W (Tc

=25°C)∗

2

PC

∗1 Single pulse, PW=100ms

∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

W

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector power

dissipation

Numéro de pièce similaire - 2SD1760TLQ

Fabricant	No de pièce	Fiches technique	Description
Rohm	2SD1760TLR	81Kb / 3P	Power Transistor (50V, 3A)

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Description similaire - 2SD1760TLQ

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2SD1760TLQ Fiches technique(PDF) 1 Page - Rohm

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