Moteur de recherche de fiches techniques de composants électroniques |
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BTA12 Fiches technique(PDF) 5 Page - STMicroelectronics |
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BTA12 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 12 page BTA12, BTB12, T12xx Characteristics 5/12 Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t Figure 8. Figure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 0.01 0.10 1.00 10.00 10 100 1000 I (A), I t (A s) TSM 22 t (ms) p T initial=25°C j ITSM dI/dt limitation: 50A/µs I t 2 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 T (°C) j I,I ,I [T ] / GT H L j I ,I ,I [T =25°C] GT H L j IGT IH & IL Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1210/T1235) Figure 10. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW) 0.1 1.0 10.0 100.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 T1210/SW (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c T1235/T1250/CW/BW C B 0.1 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10.0 100.0 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c TW Figure 11. Relative variation of critical rate of decrease of main current versus junction temperature Figure 12. D2PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) 0 25 50 75 100 125 0 1 2 3 4 5 6 (dI/dt)c [T ] / pecified] j (dI/dt)c [T s j T (°C) j 0 4 8 1216 20 2428 32 3640 0 10 20 30 40 50 60 70 80 S(cm²) R (°C/W) th(j-a) DPAK 2 |
Numéro de pièce similaire - BTA12 |
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Description similaire - BTA12 |
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