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IRF6618TR1PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF6618TR1PBF
Description  Lead-Free (Qualified up to 260째C Reflow)
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF6618TR1PBF Fiches technique(HTML) 1 Page - International Rectifier

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www.irf.com
1
08/17/07
IRF6618PbF
IRF6618TRPbF
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 24A.
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 2.2m
Ω@ 10V 3.4mΩ@ 4.5V
DirectFET
™ISOMETRIC
MT
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
210
24
Max.
30
24
240
±20
30
170
DirectFET
™ Power MOSFET ‚
l RoHs Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

Description
The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for
parameters that are critical in synchronous buck converter’s SyncFET sockets.
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
43nC
15nC
4.0nC
46nC
28nC
1.64V
0
102030405060
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 24V
VDS= 15V
ID= 24A
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
ID = 30A
TJ = 25°C
TJ = 125°C
PD - 97240A


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