FQP9N08 datasheet(3/8 Pages) FAIRCHILD

No de pièce	FQP9N08

Description	80V N-Channel MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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Rev. A2, December 2000

01

2345

67

0

2

4

6

8

10

12

V

DS = 40V

V

DS = 64V

※ Note : I

D = 9.3A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

100

200

300

400

500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

※ Notes :

1. 250μs Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

-1

10

0

10

1

25℃

175℃

※ Notes :

1. V

GS = 0V

2. 250μs Pulse Test

V

SD , Source-Drain Voltage [V]

0

4

8

12

16

20

24

0.0

0.2

0.4

0.6

0.8

1.0

※ Note : T

J = 25

℃

V

GS = 20V

V

GS = 10V

I

D , Drain Current [A]

24

6

8

10

-1

10

0

10

1

※ Notes :

1. V

DS = 30V

2. 250μs Pulse Test

-55℃

175℃

25℃

V

GS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

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