Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

FQP5P20 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FQP5P20
Description  200V P-Channel MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQP5P20 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FQP5P20 Datasheet HTML 1Page - Fairchild Semiconductor FQP5P20 Datasheet HTML 2Page - Fairchild Semiconductor FQP5P20 Datasheet HTML 3Page - Fairchild Semiconductor FQP5P20 Datasheet HTML 4Page - Fairchild Semiconductor FQP5P20 Datasheet HTML 5Page - Fairchild Semiconductor FQP5P20 Datasheet HTML 6Page - Fairchild Semiconductor FQP5P20 Datasheet HTML 7Page - Fairchild Semiconductor FQP5P20 Datasheet HTML 8Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
©2000 Fairchild Semiconductor International
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, May 2000
Elerical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5mH, IAS = -4.8A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -4.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-200
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.17
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -200 V, VGS = 0 V
--
--
-1
µA
VDS = -160 V, TC = 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-3.0
--
-5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -2.4 A
--
1.1
1.4
gFS
Forward Transconductance
VDS = -40 V, ID = -2.4 A
--
2.4
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
330
430
pF
Coss
Output Capacitance
--
75
98
pF
Crss
Reverse Transfer Capacitance
--
12
15
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -100 V, ID = -4.8 A,
RG = 25 Ω
--
9
28
ns
tr
Turn-On Rise Time
--
70
150
ns
td(off)
Turn-Off Delay Time
--
12
35
ns
tf
Turn-Off Fall Time
--
25
60
ns
Qg
Total Gate Charge
VDS = -160 V, ID = -4.8 A,
VGS = -10 V
--
10
13
nC
Qgs
Gate-Source Charge
--
2.8
--
nC
Qgd
Gate-Drain Charge
--
5.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-4.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-19.2
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -4.8 A
--
--
-5.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -4.8 A,
dIF / dt = 100 A/µs
--
175
--
ns
Qrr
Reverse Recovery Charge
--
1.07
--
µC


Numéro de pièce similaire - FQP5P20

FabricantNo de pièceFiches techniqueDescription
logo
Fairchild Semiconductor
FQP5P10 FAIRCHILD-FQP5P10 Datasheet
646Kb / 8P
   100V P-Channel MOSFET
More results

Description similaire - FQP5P20

FabricantNo de pièceFiches techniqueDescription
logo
Kersemi Electronic Co.,...
KSMD5P20 KERSEMI-KSMD5P20 Datasheet
1Mb / 8P
   200V P-Channel MOSFET
logo
Fairchild Semiconductor
FQAF12P20 FAIRCHILD-FQAF12P20 Datasheet
615Kb / 8P
   200V P-Channel MOSFET
FQB3P20 FAIRCHILD-FQB3P20 Datasheet
560Kb / 9P
   200V P-Channel MOSFET
logo
Unisonic Technologies
7P20 UTC-7P20_11 Datasheet
213Kb / 5P
   200V P-CHANNEL MOSFET
logo
Fairchild Semiconductor
FQPF5P20 FAIRCHILD-FQPF5P20 Datasheet
610Kb / 8P
   200V P-Channel MOSFET
FQA12P20 FAIRCHILD-FQA12P20 Datasheet
628Kb / 8P
   200V P-Channel MOSFET
FQP3P20 FAIRCHILD-FQP3P20 Datasheet
549Kb / 8P
   200V P-Channel MOSFET
logo
Kersemi Electronic Co.,...
KSM12P20 KERSEMI-KSM12P20 Datasheet
1Mb / 7P
   200V P-Channel MOSFET
logo
Unisonic Technologies
7P20 UTC-7P20 Datasheet
213Kb / 6P
   200V P-CHANNEL MOSFET
logo
Guangdong Kexin Industr...
KQB12P20 KEXIN-KQB12P20 Datasheet
63Kb / 2P
   200V P-Channel MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com