M74HCT7007RM13TR datasheet(3/8 Pages) STMICROELECTRONICS

No de pièce	M74HCT7007RM13TR

Description	HEX BUFFER

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M74HCT7007

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DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)

CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per buffer)

Symbol

Parameter

Test Condition

Value

Unit

VCC

(V)

TA = 25°C

-40 to 85°C

-55 to 125°C

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

VIH

High Level Input

Voltage

4.5

to

5.5

2.0

V

VIL

Low Level Input

Voltage

4.5

to

5.5

0.8

V

VOH

High Level Output

Voltage

4.5

IO=-20 µA

4.4

4.5

4.4

V

IO=-4.0 mA

4.18

4.31

4.13

4.10

VOL

Low Level Output

Voltage

4.5

IO=20 µA

0.0

0.1

V

IO=4.0 mA

0.17

0.26

0.33

0.40

II

Input Leakage

Current

5.5

VI = VCC or GND

± 0.1

± 1

µA

ICC

Quiescent Supply

Current

5.5

VI = VCC or GND

110

20

µA

∆ I

CC

Additional Worst

Case Supply

Current

5.5

Per Input pin

VI = 0.5V or

VI = 2.4V

Other Inputs at

VCC or GND

IO = 0

2.0

2.9

3.0

mA

Symbol

Parameter

Test Condition

Value

Unit

VCC

(V)

TA = 25°C

-40 to 85°C

-55 to 125°C

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

tTLH tTHL Output Transition

Time

4.5

8

151923

ns

tPLH tPHL Propagation Delay

Time

4.5

14

23

29

35

ns

Symbol

Parameter

Test Condition

Value

Unit

VCC

(V)

TA = 25°C

-40 to 85°C

-55 to 125°C

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

CIN

Input Capacitance

5

101010

pF

CPD

Power Dissipation

Capacitance (note

1)

22

pF

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