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FDN359BN Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN359BN Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page January 2006 ©2006 Fairchild Semiconductor Corporation FDN359BN Rev A(W) FDN359BN N-Channel Logic Level PowerTrench TM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 2.7 A, 30 V. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V • Very fast switching speed. • Low gate charge (5nC typical) • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. G D S SuperSOT -3 TM D S G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current – Continuous (Note 1a) 2.7 ID – Pulsed 15 A Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 359B FDN359BN 7’’ 8mm 3000 units |
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