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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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CSD17381F4 Fiches technique(PDF) 2 Page - Texas Instruments |
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CSD17381F4 Fiches technique(HTML) 2 Page - Texas Instruments |
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2 / 11 page  CSD17381F4 SLPS411A – APRIL 2013 – REVISED JULY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250μA 30 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V 1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = 10V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA 0.65 0.85 1.10 V VGS = 1.8V, IDS =0.5A 160 250 m Ω VGS = 2.5V, IDS =0.5A 110 143 m Ω RDS(on) Drain to Source On Resistance VGS = 4.5V, IDS = 0.5A 90 117 m Ω VGS = 8V, IDS =0.5A 84 109 m Ω gfs Transconductance VDS = 15V, IDS = 0.5A 4.8 S Dynamic Characteristics Ciss Input Capacitance 150 195 pF VGS = 0V, VDS = 15V, Coss Output Capacitance 44 57 pF f = 1MHz Crss Reverse Transfer Capacitance 2.2 2.9 pF RG Series Gate Resistance 23 Ω Qg Gate Charge Total (4.5V) 1040 1350 pC Qgd Gate Charge Gate to Drain 133 pC VDS = 15V, IDS = 0.5A Qgs Gate Charge Gate to Source 226 pC Qg(th) Gate Charge at Vth 150 pC Qoss Output Charge VDS = 15V, VGS = 0V 1110 pC td(on) Turn On Delay Time 3.4 ns tr Rise Time 1.4 ns VDS = 0V, VGS = 4.5V, IDS = 0.5A,RG = 2Ω td(off) Turn Off Delay Time 10.8 ns tf Fall Time 3.6 ns Diode Characteristics VSD Diode Forward Voltage ISD = 0.5A, VGS = 0V 0.73 0.9 V Qrr Reverse Recovery Charge 1500 pC VDS= 15V, IF = 0.5A, di/dt = 300A/μs trr Reverse Recovery Time 5.6 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER Typical Values UNIT Thermal Resistance Junction to Ambient(1) 90 °C/W RθJA Thermal Resistance Junction to Ambient(2) 250 °C/W (1) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17381F4 |
Numéro de pièce similaire - CSD17381F4 |
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Description similaire - CSD17381F4 |
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