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IRLML6302TR Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRLML6302TR
Description  generation v technology
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRLML6302TR Fiches technique(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
VDSS = -20V
RDS(on) = 0.60Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
IRLML6302PbF
08/27/07
Description
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-0.78
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-0.62
A
IDM
Pulsed Drain Current 
-4.9
PD@TA = 25°C
Power Dissipation
540
mW
Linear Derating Factor
4.3
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
230
Thermal Resistance
°C/W
l
Lead-Free
Micro3TM
6
* 

'

www.irf.com
1
PD - 94947B


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