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IRF7389TR Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7389TR Fiches technique(HTML) 2 Page - International Rectifier |
2 / 10 page IRF7389 2 www.irf.com
Surface mounted on FR-4 board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions N-Ch 30 VGS = 0V, ID = 250µA P-Ch -30 VGS = 0V, ID = -250µA N-Ch 0.022 Reference to 25°C, ID = 1mA P-Ch 0.022 Reference to 25°C, ID = -1mA 0.023 0.029 VGS = 10V, ID = 5.8A 0.032 0.046 VGS = 4.5V, ID = 4.7A 0.042 0.058 VGS = -10V, ID = -4.9A 0.076 0.098 VGS = -4.5V, ID = -3.6A N-Ch 1.0 VDS = VGS, ID = 250µA P-Ch -1.0 VDS = VGS, ID = -250µA N-Ch 14 VDS = 15V, ID = 5.8A P-Ch 7.7 VDS = -15V, ID = -4.9A N-Ch 1.0 VDS = 24V, VGS = 0V P-Ch -1.0 VDS = -24V, VGS = 0V N-Ch 25VDS = 24V, VGS = 0V, TJ = 55°C P-Ch -25VDS = -24V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ±20V N-Ch 22 33 P-Ch 23 34 N-Ch 2.6 3.9 P-Ch 3.8 5.7 N-Ch 6.4 9.6 P-Ch 5.9 8.9 N-Ch 8.1 12 P-Ch 13 19 N-Ch 8.9 13 P-Ch 13 20 N-Ch 26 39 P-Ch 34 51 N-Ch 17 26 P-Ch 32 48 N-Ch 650 P-Ch 710 N-Ch 320 pF P-Ch 380 N-Ch 130 P-Ch 180 V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns N-Channel ID = 5.8A, VDS = 15V, VGS = 10V P-Channel ID = -4.9A, VDS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0Ω, RD = 15Ω P-Channel VDD = -15V, ID = -1.0A, RG = 6.0Ω, RD = 15Ω N-Channel VGS = 0V, VDS = 25V, = 1.0MHz P-Channel VGS = 0V, VDS = -25V, = 1.0MHz N-Ch P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch 2.5 P-Ch -2.5 N-Ch 30 P-Ch -30 N-Ch 0.78 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V P-Ch -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V N-Ch 4568 P-Ch 44 66 N-Ch 58 87 P-Ch 42 63 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF =1.7A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.7A, di/dt = 100A/µs N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. nA |
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