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SI4435DDY-T1-GE3 Fiches technique(PDF) 6 Page - Vishay Siliconix |
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SI4435DDY-T1-GE3 Fiches technique(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com 6 Document Number: 68841 S09-0863-Rev. C, 18-May-09 Vishay Siliconix Si4435DDY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68841. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 0 0 0 1 10 1 10-1 10-4 100 0.2 0.1 0.05 0.02 Square WavePulse Duration (s) 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 1 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square WavePulse Duration (s) 1 0.1 0.01 |
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