AD8206YRZ datasheet(6/16 Pages) AD

No de pièce	AD8206YRZ

Description	High Common-Mode Voltage, Bidirectional Current Shunt Amplifier

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Fabricant	AD [Analog Devices]

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6 / 16 page

AD8206

Data Sheet

Rev. B | Page 6 of 16

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

Figure 2. Metallization Diagram

NC = NO CONNECT

AD8206

TOP VIEW

(Not to Scale)

–IN

1

GND

2

VREF2 3

NC

4

+IN

VREF1

V+

OUT

8

7

6

5

Figure 3. Pin Configuration

Table 3. Pin Function Descriptions

Pin No.

Mnemonic

X

Y

1

−IN

−209

+486

2

GND

−447

+34

3

VREF2

−432

−480

4

NC

N/A

5

OUT

+444

−495

6

V+

+444

−227

7

VREF1

+456

+342

8

+IN

+207

+486

Die size is 1245 µm by 1400 µm.

Die thickness is 13 mil.

Minimum passivation opening (minimum bond pad size)

is 92 µm × 92 µm.

Passivation type is 8KA USG (Oxide) + 10KA Oxynitride.

Bond pad metal composition is 98.5% Al, 1% Si, and 0.5% Cu.

Backside potential is V+.

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Analog Devices	AD8206	361Kb / 13P	High Common-Mode Voltage, Bidirectional Current Shunt Amplifier REV. C
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