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FQAF58N08 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FQAF58N08 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Rev. A2, December 2000 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.4mH, IAS = 44A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 57.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.07 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 µA VDS = 64 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 22 A -- 0.018 0.024 Ω gFS Forward Transconductance VDS = 30 V, ID = 22 A -- 31 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1450 1900 pF Coss Output Capacitance -- 520 680 pF Crss Reverse Transfer Capacitance -- 120 155 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 40 V, ID = 57.5 A, RG = 25 Ω -- 16.5 45 ns tr Turn-On Rise Time -- 200 410 ns td(off) Turn-Off Delay Time -- 70 150 ns tf Turn-Off Fall Time -- 95 200 ns Qg Total Gate Charge VDS = 64 V, ID = 57.5 A, VGS = 10 V -- 50 65 nC Qgs Gate-Source Charge -- 9.3 -- nC Qgd Gate-Drain Charge -- 25 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 44 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 44 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 57.5 A, dIF / dt = 100 A/µs -- 73 -- ns Qrr Reverse Recovery Charge -- 185 -- nC |
Numéro de pièce similaire - FQAF58N08 |
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Description similaire - FQAF58N08 |
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