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FM28V100-TG Fiches technique(PDF) 1 Page - Cypress Semiconductor

No de pièce FM28V100-TG
Description  1Mbit Bytewide F-RAM Memory
Download  14 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM28V100-TG Fiches technique(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-86202 Rev. **
Revised February 25, 2013
FM28V100
1Mbit Bytewide F-RAM Memory
Features
1Mbit Ferroelectric Nonvolatile RAM
Organized as 128Kx8
High Endurance 100 Trillion (10
14) Read/Writes
NoDelay™ Writes
Page Mode Operation to 33MHz
Advanced High-Reliability Ferroelectric Process
Superior to Battery-backed SRAM Modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
SRAM Replacement
JEDEC 128Kx8 SRAM pinout
60 ns Access Time, 90 ns Cycle Time
Low Power Operation
2.0V – 3.6V Power Supply
Standby Current 90 A (typ)
Active Current 7 mA (typ)
Industry Standard Configurations
Industrial Temperature -40 C to +85 C
32-pin “Green”/RoHS Package
General Description
The FM28V100 is a 128K x 8 nonvolatile memory
that reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
and
system
design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and very high write endurance make
F-RAM superior to other types of memory.
In-system operation of the FM28V100 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by toggling a chip enable pin
or simply by changing the address. The F-RAM
memory is nonvolatile due to its unique ferroelectric
memory process. These features make the FM28V100
ideal for nonvolatile memory applications requiring
frequent or rapid writes in the form of an SRAM.
Device
specifications
are
guaranteed
over
the
industrial temperature range -40°C to +85°C.
Pin Configuration
* Reserved for A17 on 2Mb
Ordering Information
FM28V100-TG
32-pin “Green”/RoHS TSOP
FM28V100-TGTR
32-pin “Green”/RoHS TSOP,
Tape & Reel
TSOP-I
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
WE
CE2
A15
VDD
NC*
A16
A14
A12
A7
A6
A5
A4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3


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