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FM25VN10-GTR Fiches technique(PDF) 1 Page - Cypress Semiconductor

No de pièce FM25VN10-GTR
Description  1Mb Serial 3V F-RAM Memory
Download  17 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25VN10-GTR Fiches technique(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-84499 Rev. **
Revised February 25, 2013
FM25V10
1Mb Serial 3V F-RAM Memory
Features
1M bit Ferroelectric Nonvolatile RAM
Organized as 131,072 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM25VN10)
Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
90 A Standby Current (typ.)
5 A Sleep Mode Current (typ.)
Industry Standard Configurations
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
Description
The FM25V10 is a 1-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V10 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling.
The
product
offers
very
high
write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V10 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25V10 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The devices use the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. The FM25VN10 is offered with a unique
serial number that is read-only and can be used to
identify a board or system. Both devices incorporate
a read-only Device ID that allows the host to
determine the manufacturer, product density, and
product revision. The devices are guaranteed over an
industrial temperature range of -40°C to +85°C.
Pin Configuration
S
Q
W
VSS
VDD
HOLD
C
D
1
2
3
4
8
7
6
5
Pin Name
Function
/S
Chip Select
/W
Write Protect
/HOLD
Hold
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
VDD
Supply Voltage
VSS
Ground


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