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FM25VN10-GTR Fiches technique(PDF) 1 Page - Cypress Semiconductor |
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FM25VN10-GTR Fiches technique(HTML) 1 Page - Cypress Semiconductor |
1 / 17 page This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-84499 Rev. ** Revised February 25, 2013 FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM Organized as 131,072 x 8 bits High Endurance 100 Trillion (10 14) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency Direct Hardware Replacement for Serial Flash SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme Hardware Protection Software Protection Device ID and Serial Number Device ID reads out Manufacturer ID & Part ID Unique Serial Number (FM25VN10) Low Voltage, Low Power Low Voltage Operation 2.0V – 3.6V 90 A Standby Current (typ.) 5 A Sleep Mode Current (typ.) Industry Standard Configurations Industrial Temperature -40 C to +85 C 8-pin “Green”/RoHS SOIC Package Description The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25V10 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling. The product offers very high write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash. These capabilities make the FM25V10 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of Serial Flash can cause data loss. The FM25V10 provides substantial benefits to users of Serial Flash as a hardware drop-in replacement. The devices use the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The FM25VN10 is offered with a unique serial number that is read-only and can be used to identify a board or system. Both devices incorporate a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The devices are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration S Q W VSS VDD HOLD C D 1 2 3 4 8 7 6 5 Pin Name Function /S Chip Select /W Write Protect /HOLD Hold C Serial Clock D Serial Data Input Q Serial Data Output VDD Supply Voltage VSS Ground |
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