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FM24W256-EG Fiches technique(PDF) 1 Page - Cypress Semiconductor |
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FM24W256-EG Fiches technique(HTML) 1 Page - Cypress Semiconductor |
1 / 14 page Pre-Production This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-84464 Rev. *A Revised March 07, 2013 FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (10 14) Read/Writes 38 year Data Retention (@ +75ºC) NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface Up to 1 MHz maximum bus frequency Direct hardware replacement for EEPROM Supports legacy timing for 100 kHz & 400 kHz Low Power Operation Wide Voltage Operation 2.7V-5.5V 100 A Active Current (100 kHz) 15 A Standby Current (typ.) Industry Standard Configuration Industrial Temperature -40 C to +85 C 8-pin “Green”/RoHS SOIC Package Description The FM24W256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24W256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM24W256 is capable of supporting 10 14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24W256 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24W256 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24W256 is available in industry standard 8-pin SOIC package using a familiar two-wire protocol. It is guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration A0 A1 A2 VSS VDD WP SCL SDA 1 2 3 4 8 7 6 5 Pin Names Function A0-A2 Device Select Address SDA Serial Data/Address SCL Serial Clock WP Write Protect VSS Ground VDD Supply Voltage Ordering Information FM24W256-G 8-pin “Green”/RoHS SOIC FM24W256-GTR 8-pin “Green”/RoHS SOIC, Tape & Reel FM24W256-EG* 8-pin “Green”/RoHS EIAJ SOIC FM24W256-EGTR* 8-pin “Green”/RoHS EIAJ SOIC, Tape & Reel * Not Recommended for New Designs |
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