 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
FQA28N50 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FQA28N50 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
|
|
1 / 8 page  ©2001 Fairchild Semiconductor Corporation September 2001 Rev. A2, September 2001 FRFETTM FQA28N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology. Features • 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 60 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode ( max, 250ns ) Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQA28N50F Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 28.4 A - Continuous (TC = 100°C) 18 A IDM Drain Current - Pulsed (Note 1) 113.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1300 mJ IAR Avalanche Current (Note 1) 28.4 A EAR Repetitive Avalanche Energy (Note 1) 31 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 17 V/ns PD Power Dissipation (TC = 25°C) 310 W - Derate above 25°C 2.5 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.4 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-3P FQA Series G S D |
Numéro de pièce similaire - FQA28N50 |
|
Description similaire - FQA28N50 |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
