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FQA11N90 Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce FQA11N90
Description  900V N-Channel MOSFET
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA11N90 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
September 2000
Rev. A, September 2000
QFET
QFET
QFET
QFETTM
FQA11N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 11.4A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQA11N90
Units
VDSS
Drain-Source Voltage
900
V
ID
Drain Current
- Continuous (TC = 25°C)
11.4
A
- Continuous (TC = 100°C)
7.2
A
IDM
Drain Current
- Pulsed
(Note 1)
45.6
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1000
mJ
IAR
Avalanche Current
(Note 1)
11.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
30
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25°C)
300
W
- Derate above 25°C
2.38
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.42
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.24
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
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S
D
G
TO-3P
FQA Series
G
S
D


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