SI7431DP-T1-GE3 datasheet(4/8 Pages) VISHAY

No de pièce	SI7431DP-T1-GE3

Description	P-Channel 200 V (D-S) MOSFET

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Document Number: 73116

S10-2246-Rev. E, 04-Oct-10

Vishay Siliconix

Si7431DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Threshold Voltage

- 0.5

- 0.2

0.1

0.4

0.7

1.0

1.3

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power

0

120

200

40

80

Time (s)

160

110

0.1

0.01

0.001

Safe Operating Area

100

1

0.1

1

10

1000

0.01

10

TC = 25 °C

Single Pulse

0.1

Limited by

RDS(on)*

DC

10 ms

100 ms

1 s

10 s

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

1

10

600

10-1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 50 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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SI7431DP-T1-GE3 Fiches technique(PDF) 4 Page - Vishay Siliconix

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