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STD16N65M5 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STD16N65M5 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 19 page STB16N65M5, STD16N65M5 Electrical characteristics Doc ID 18146 Rev 2 5/19 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td (v) tr (v) tf (i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) (see Figure 22) - 25 7 6 8 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 12 48 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 12 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 22) - 300 3.5 23 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 22) - 350 4 24 ns nC A |
Numéro de pièce similaire - STD16N65M5 |
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Description similaire - STD16N65M5 |
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