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TS3USB30EDGSR Fiches technique(PDF) 4 Page - Texas Instruments |
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TS3USB30EDGSR Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 20 page TS3USB30E SCDS255E – DECEMBER 2008 – REVISED AUGUST 2012 www.ti.com ELECTRICAL CHARACTERISTICS (1) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP(2) MAX UNIT VIK VCC = 3 V, II = –18 mA –1.2 V IIN Control inputs VCC = 4.3 V, 0 V, VIN = 0 to 4.3 V ±1 μA VCC = 4.3 V, VO = 0 to 3.6 V, IOZ (3) ±1 μA VI = 0, Switch OFF VCC = 0 V, VO = 0 to 4.3 V, IOFF D+ and D– ±2 μA VI = 0, VIN = VCC or GND ICC VCC = 4.3 V, II/O = 0, Switch ON or OFF 1 μA ΔICC (4) Control inputs VCC = 4.3 V, VIN = 2.6 V 10 μA Cin Control inputs VCC = 0 V, VIN = VCC or GND 1 pF Cio(OFF) VCC = 3.3 V, VI/O = 3.3 V or 0, Switch OFF 2 pF Cio(ON) VCC = 3.3 V, VI/O = 3.3 V or 0, Switch ON 7.5 pF ron (5) VCC = 3 V, VI = 0.4, IO = –8 mA 6 10 Ω Δron VCC = 3 V, VI = 0.4, IO = –8 mA 0.35 Ω ron(flat) VCC = 3 V, VI = 0 V or 1 V, IO = –8 mA 2 Ω (1) VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins. (2) All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C. (3) For I/O ports, the parameter IOZ includes the input leakage current. (4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND. (5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals. 4 Submit Documentation Feedback Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Links: TS3USB30E |
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