Moteur de recherche de fiches techniques de composants électroniques |
|
TPS1120DRG4 Fiches technique(PDF) 2 Page - Texas Instruments |
|
TPS1120DRG4 Fiches technique(HTML) 2 Page - Texas Instruments |
2 / 15 page TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 schematic 1GATE 1SOURCE 1DRAIN† ESD- Protection Circuitry 2GATE 2SOURCE 2DRAIN† ESD- Protection Circuitry † For all applications, both drain pins for each device should be connected. TPS1120Y chip information This chip, when properly assembled, displays characteristics similar to the TPS1120C. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10% ALL DIMENSIONS ARE IN MILS TPS1120Y (2) (6) (1) (3) (7) (8) (5) (4) 1DRAIN 1SOURCE 1GATE 2SOURCE 2GATE 1DRAIN 2DRAIN 2DRAIN 57 64 (2) (1) (3) (4) (6) (7) (8) (5) |
Numéro de pièce similaire - TPS1120DRG4 |
|
Description similaire - TPS1120DRG4 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |