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TPS1101DRG4 Fiches technique(PDF) 4 Page - Texas Instruments |
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TPS1101DRG4 Fiches technique(HTML) 4 Page - Texas Instruments |
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4 / 13 page  TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics at TJ = 25°C (unless otherwise noted) static PARAMETER TEST CONDITIONS TPS1101 TPS1101Y UNIT PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = – 250 µA –1 – 1.25 – 1.5 – 1.25 V VSD Source-to-drain voltage (diode-forward voltage)† IS = – 1 A, VGS = 0 V – 1.04 – 1.04 V IGSS Reverse gate current, drain short circuited to source VDS = 0 V, VGS = – 12 V ±100 nA IDSS Zero-gate-voltage drain VDS =12 V VGS =0V TJ = 25°C – 0.5 µA IDSS gg current VDS = – 12 V, VGS = 0 V TJ = 125°C –10 µA VGS = – 10 V ID = – 2.5 A 90 90 rDS( ) Static drain-to-source VGS = – 4.5 V ID = – 1.5 A 134 190 134 m Ω rDS(on) Static drain to source on-state resistance† VGS = – 3 V ID =0 5 A 198 310 198 m Ω VGS = – 2.7 V ID = – 0.5 A 232 400 232 gfs Forward transconductance† VDS = – 10 V, ID = – 2 A 4.3 4.3 S † Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2% dynamic PARAMETER TEST CONDITIONS TPS1101, TPS1101Y UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Qg Total gate charge 11.25 Qgs Gate-to-source charge VDS = – 10 V, VGS = – 10 V, ID = – 1 A 1.5 nC Qgd Gate-to-drain charge 2.6 td(on) Turn-on delay time 6.5 ns td(off) Turn-off delay time VDD = – 10 V, RL = 10 Ω,ID = – 1 A, 19 ns tr Rise time DD , RG = 6 Ω, L , See Figures 1 and 2 D , 5.5 tf Fall time 13 ns trr(SD) Source-to-drain reverse recovery time IF = 5.3 A, di/dt = 100 A/ µs 16 |
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Description similaire - TPS1101DRG4 |
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