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SI7620DN-T1-GE3 Fiches technique(PDF) 11 Page - Vishay Siliconix

No de pièce SI7620DN-T1-GE3
Description  N-Channel 150-V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7620DN-T1-GE3 Fiches technique(HTML) 11 Page - Vishay Siliconix

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Document Number 71681
03-Mar-06
Vishay Siliconix
AN822
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Figure 5. Spreading Copper - Si7401DN
45
55
65
75
85
95
105
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Spreading Copper (sq. in.)
100 %
50 %
0 %
Figure 6. Spreading Copper - Junction-to-Ambient Performance
50
60
70
80
90
100
110
120
130
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Spreading Copper (sq. in.)
100 %
0 %
50 %


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