FGB40N6S2 datasheet(1/8 Pages) FAIRCHILD

No de pièce	FGB40N6S2

Description	600V, SMPS II Series N-Channel IGBT

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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August 2003

FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5

FGH40N6S2 / FGP40N6S2 / FGB40N6S2

600V, SMPS II Series N-Channel IGBT

General Description

The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are

Low Gate Charge, Low Plateau Voltage SMPS II IGBTs

combining the fast switching speed of the SMPS IGBTs

along with lower gate charge, plateau voltage and ava-

lanche capability (UIS). These LGC devices shorten delay

times, and reduce the power requirement of the gate drive.

These devices are ideally suited for high voltage switched

mode power supply applications where low conduction

loss, fast switching times and UIS capability are essential.

SMPS II LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

IGBT (co-pack) formerly Developmental Type TA49438

Features

• 100kHz Operation at 390V, 24A

• 200kHZ Operation at 390V, 18A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC

• Low Gate Charge . . . . . . . . . 35nC at VGE = 15V

• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ

• Low Conduction Loss

Device Maximum Ratings T

C= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

BVCES

Collector to Emitter Breakdown Voltage

600

V

IC25

Collector Current Continuous, TC = 25°C

75

A

IC110

Collector Current Continuous, TC = 110°C

35

A

ICM

Collector Current Pulsed (Note 1)

180

A

VGES

Gate to Emitter Voltage Continuous

±20

V

VGEM

Gate to Emitter Voltage Pulsed

±30

V

SSOA

Switching Safe Operating Area at TJ = 150°C, Figure 2

100A at 600V

EAS

Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V

260

mJ

PD

Power Dissipation Total TC = 25°C

290

W

Power Dissipation Derating TC > 25°C

2.33

W/°C

TJ

Operating Junction Temperature Range

-55 to 150

°C

TSTG

Storage Junction Temperature Range

-55 to 150

°C

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

Package

Symbol

C

E

G

TO-247

E

C

G

TO-263AB

TO-220AB E

C

G

E

G

COLLECTOR

(Flange)

COLLECTOR

(Back-Metal)

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