FDZ5047N datasheet(4/6 Pages) FAIRCHILD

No de pièce	FDZ5047N

Description	30V N-Channel Logic Level PowerTrench BGA MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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FDZ5047N Rev D4 (W)

Typical Characteristics

0

2

4

6

8

10

0

2040

6080

100

Qg, GATE CHARGE (nC)

ID = 22A

VDS =10V

20V

15V

0

2000

4000

6000

8000

0

5

10

15

20

25

30

VDS, DRAIN TO SOURCE VOLTAGE (V)

CISS

CRSS

COSS

f =1MHz

VGS = 0V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.01

0.1

1

10

100

VDS, DRAIN-SOURCE VOLTAGE (V)

DC

10s

1s

100ms

RDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

RθJA = 95

oC/W

TA = 25

oC

10ms

1ms

0

10

20

30

40

50

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

RθJA = 95°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

RθJA(t) = r(t) * RθJA

RθJA = 95 °C/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

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