FDS6680 datasheet(2/8 Pages) FAIRCHILD

No de pièce	FDS6680

Description	Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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Electrical Characteristics

(T

A = 25

OC unless otherwise noted )

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, I D = 250 µA

30

V

∆BV

DSS/∆TJ

Breakdown Voltage Temp. Coefficient

I

D = 250 µA, Referenced to 25

oC

23

mV/

oC

I

DSS

Zero Gate Voltage Drain Current

V

DS = 24 V, VGS = 0 V

1

µA

T

J = 55°C

10

µA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 20 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -20 V, VDS= 0 V

-100

nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = 250 µA

1

1.7

3

V

∆V

GS(th)/∆TJ

Gate Threshold Voltage Temp.Coefficient

I

D = 250 µA, Referenced to 25

oC

-5

mV/

oC

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 10 V, ID = 11.5 A

0.0085

0.01

Ω

T

J =125°C

0.014

0.017

V

GS = 4.5 V, ID = 9.5 A

0.0125

0.015

I

D(ON)

On-State Drain Current

V

GS = 10 V, VDS = 5 V

50

A

g

FS

Forward Transconductance

V

DS = 15 V, ID = 11.5 A

40

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = 15 V, VGS = 0 V,

f = 1.0 MHz

2070

pF

C

oss

Output Capacitance

510

pF

C

rss

Reverse Transfer Capacitance

235

pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time

V

DS= 15 V, I D = 1 A

13

21

ns

t

r

Turn - On Rise Time

V

GS = 10 V , RGEN = 6 Ω

10

18

ns

t

D(off)

Turn - Off Delay Time

36

58

ns

t

f

Turn - Off Fall Time

13

23

ns

Q

g

Total Gate Charge

V

DS = 15 V, ID = 11.5 A,

19

27

nC

Q

gs

Gate-Source Charge

V

GS = 5 V

7

nC

Q

gd

Gate-Drain Charge

6

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current

2.1

A

V

SD

Drain-Source Diode Forward Voltage

V

GS = 0 V, IS = 2.1 A

(Note 2)

1.2

V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6680 Rev.E1

c. 125

OC/W on a 0.006 in2 pad

of 2oz copper.

b. 105

OC/W on a 0.04 in2

pad of 2oz copper.

a. 50

OC/W on a 1 in2 pad

of 2oz copper.

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