FDS6614A datasheet(1/8 Pages) FAIRCHILD

No de pièce	FDS6614A

Description	N-Channel Logic Level PowerTrench MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FDS6614A Rev. C

Features

9.3 A, 30 V. R

DS(on) = 0.018 W @ VGS = 10 V

R

DS(on) = 0.025 W @ VGS = 4.5 V.

Low gate charge (12nC typical).

Fast switching speed.

High performance trench technology for extremely

low R

DS(on).

High power and current handling capability.

ã1999 Fairchild Semiconductor Corporation

January 2000

1

6

7

8

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4

3

5

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

± 20

V

ID

Drain Current

- Continuous

(Note 1a)

9.3

A

- Pulsed

40

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

PD

(Note 1c)

1.0

W

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6614A

13’’

12mm

2500 units

S

D

S

SO-8

D

G

FDS6614A

N-Channel Logic Level PowerTrench® MOSFET

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and fast

switching are required.

Applications

DC/DC converter

Load switch

Motor drives

General Description

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