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TPS62200DBVTG4 Fiches technique(PDF) 6 Page - Texas Instruments |
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TPS62200DBVTG4 Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 24 page www.ti.com ABSOLUTE MAXIMUM RATINGS DISSIPATION RATING TABLE RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS TPS62200 ,, TPS62201 TPS62202, TPS62203, TPS62207 TPS62204, TPS62205, TPS62208 SLVS417E – MARCH 2002 – REVISED MAY 2006 over operating free-air temperature (unless otherwise noted) (1) UNIT Supply voltages, VI(2) -0.3 V to 7.0 V Voltages on pins SW, EN, FB (2) -0.3 V to VCC +0.3 V Continuous power dissipation, PD See Dissipation Rating Table Operating junction temperature range, TJ -40°C to 150°C Storage temperature, Tstg -65°C to 150°C Lead temperature (soldering, 10 sec) 260°C (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to network ground terminal. TA ≤ 25°C TA = 70°C TA = 85°C PACKAGE RθJA POWER RATING POWER RATING POWER RATING DBV 250°/W 400 mW 220 mW 160 mW MIN NOM MAX UNIT Supply voltage, VI 2.5 6.0 V Output voltage range for adjustable output voltage version, VO 0.7 VI V Output current, IO 300 mA Inductor, L (1) 4.7 10 µH Input capacitor, CI(1) 4.7 µF Output capacitor, CO(1) 10 µF Operating ambient temperature, TA 40 85 °C Operating junction temperature, TJ 40 125 °C (1) See the application section for further information. V I = 3.6 V, VO = 1.8 V, IO = 200 mA, EN = VIN, TA = -40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VI Input voltage range 2.5 6.0 V IQ Operating quiescent current IO = 0 mA, Device is not switching 15 30 µA Shutdown supply current EN = GND 0.1 1 µA Undervoltage lockout threshold 1.5 2.0 V ENABLE V(EN) EN high level input voltage 1.3 V EN low level input voltage 0.4 V I(EN) EN input bias current EN = GND or VIN 0.01 0.1 µA POWER SWITCH VIN = VGS = 3.6 V 530 690 P-channel MOSFET on-resistance m Ω VIN = VGS = 2.5 V 670 850 rds(ON) VIN = VGS = 3.6 V 430 540 N-channel MOSFET on-resistance m Ω VIN = VGS = 2.5 V 530 660 Ilkg_(P) P-channel leakage current VDS = 6.0 V 0.1 1 µA 6 Submit Documentation Feedback |
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