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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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FDS5690 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDS5690 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  FDS5690 Rev. C Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 50 ° C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105 ° C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 125 ° C/W when mounted on a 0.003 in2 pad of 2 oz. copper. DMOS Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA60 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C57 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2 2.5 4 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C-5.9 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ=125 °C VGS = 6 V, ID = 6.5 A 0.022 0.037 0.025 0.028 0.050 0.033 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 25 A gFS Forward Transconductance VDS = 10 V, ID = 7 A 24 S Dynamic Characteristics Ciss Input Capacitance 1107 pF Coss Output Capacitance 149 pF Crss Reverse Transfer Capacitance VDS = 30 V, VGS = 0 V, f = 1.0 MHz 72 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 10 18 ns tr Turn-On Rise Time 9 18 ns td(off) Turn-Off Delay Time 24 39 ns tf Turn-Off Fall Time VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 10 18 ns Qg Total Gate Charge 23 32 nC Qgs Gate-Source Charge 4 nC Qgd Gate-Drain Charge VDS = 30 V, ID = 7 A, VGS = 10 V, 6.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.75 1.2 V |
Numéro de pièce similaire - FDS5690 |
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Description similaire - FDS5690 |
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