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KA1L0880B-YDTU Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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KA1L0880B-YDTU Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page KA1L0880B/KA1M0880B 2 Absolute Maximum Ratings Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, VDD=50V, RG=25 Ω, starting Tj=25°C 4. L=13 µH, starting Tj=25°C Parameter Symbol Value Unit Maximum Drain voltage (1) VD,Max 800 V Drain-Gate voltage (RGS=1M Ω)VDGR 800 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 32.0 ADC Single pulsed avalanche energy (3) EAS 810 mJ Avalanche current (4) IAS 15 A Continuous drain current (TC=25 °C) ID 8.0 ADC Continuous drain current (TC=100 °C) ID 5.6 ADC Maximum Supply voltage VCC,MAX 30 V Input voltage range VFB −0.3 to VSD V Total power dissipation PD 190 W Derating 1.54 W/ °C Operating ambient temperature TA −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
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