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FDN5630 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN5630
Description  60V N-Channel PowerTrench MOSFET
Download  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN5630 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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FDN5630 Rev. C
Notes:
1: RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJCis guaranteed by design while RθJAis determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) 250
°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
b) 270
°C/W when
mounted on a minimum
pad.
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
60
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA,Referenced to 25°C
63
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
12.4
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA,Referenced to 25°C
6.9
mV/
°C
RDS(ON)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.7 A
VGS = 10 V, ID = 1.7 A, TJ = 125
°C
VGS = 6 V, ID = 1.6 A
0.073
0.127
0.083
0.100
0.180
0.120
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 1.7 V
5
A
gFS
Forward Transconductance
VDS = 10 V, ID = 1.7 A
6
S
Dynamic Characteristics
Ciss
Input Capacitance
400
pF
Coss
Output Capacitance
102
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
21
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
10
20
ns
tr
Turn-On Rise Time
6
15
ns
td(off)
Turn-Off Delay Time
15
28
ns
tf
Turn-Off Fall Time
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
515
ns
Qg
Total Gate Charge
7
10
nC
Qgs
Gate-Source Charge
1.6
nC
Qgd
Gate-Drain Charge
VDS = 20 V, ID = 1.7 A,
VGS = 10 V,
1.2
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 0.42 A
(Note 2)
0.72
1.2
V


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