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FDN5630 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN5630 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDN5630 Rev. C Notes: 1: RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθJAis determined by the user's board design. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 250 °C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270 °C/W when mounted on a minimum pad. Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 63 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 12.4 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 6.9 mV/ °C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.7 A VGS = 10 V, ID = 1.7 A, TJ = 125 °C VGS = 6 V, ID = 1.6 A 0.073 0.127 0.083 0.100 0.180 0.120 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 1.7 V 5 A gFS Forward Transconductance VDS = 10 V, ID = 1.7 A 6 S Dynamic Characteristics Ciss Input Capacitance 400 pF Coss Output Capacitance 102 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 21 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 10 20 ns tr Turn-On Rise Time 6 15 ns td(off) Turn-Off Delay Time 15 28 ns tf Turn-Off Fall Time VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 515 ns Qg Total Gate Charge 7 10 nC Qgs Gate-Source Charge 1.6 nC Qgd Gate-Drain Charge VDS = 20 V, ID = 1.7 A, VGS = 10 V, 1.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 0.42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.72 1.2 V |
Numéro de pièce similaire - FDN5630 |
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Description similaire - FDN5630 |
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