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FDN5618 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN5618 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDN5618P Rev B(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA -60 V ∆BVDSS ===∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C –58 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V ∆VGS(th) ===∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C 4 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –1.25 A VGS = –4.5 V, ID = –1.0 A VGS = –10 V, ID = –3 A TJ=125 °C 0.148 0.185 0.245 0.170 0.230 0.315 Ω ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –5 A gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 4.3 S Dynamic Characteristics Ciss Input Capacitance 430 pF Coss Output Capacitance 52 pF Crss Reverse Transfer Capacitance VDS = –30 V, V GS = 0 V, f = 1.0 MHz 19 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 6.5 13 ns tr Turn–On Rise Time 8 16 ns td(off) Turn–Off Delay Time 16.5 30 ns tf Turn–Off Fall Time VDD = –30 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 48 ns Qg Total Gate Charge 8.6 13.8 nC Qgs Gate–Source Charge 1.5 nC Qgd Gate–Drain Charge VDS = –30 V, ID = –1.25 A, VGS = –10 V 1.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 250 °C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0 |
Numéro de pièce similaire - FDN5618 |
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Description similaire - FDN5618 |
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