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FDN5618P Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN5618P
Description  60V P-Channel Logic Level PowerTrench MOSFET
Download  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN5618P Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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FDN5618P Rev B(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
-60
V
∆BVDSS
===∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–58
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –48 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–1
–1.6
–3
V
∆VGS(th)
===∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA,Referenced to 25°C
4
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
ID = –1.25 A
VGS = –4.5 V,
ID = –1.0 A
VGS = –10 V, ID = –3 A TJ=125
°C
0.148
0.185
0.245
0.170
0.230
0.315
ID(on)
On–State Drain Current
VGS = –10 V,
VDS = –5 V
–5
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –1.25 A
4.3
S
Dynamic Characteristics
Ciss
Input Capacitance
430
pF
Coss
Output Capacitance
52
pF
Crss
Reverse Transfer Capacitance
VDS = –30 V,
V GS = 0 V,
f = 1.0 MHz
19
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
6.5
13
ns
tr
Turn–On Rise Time
8
16
ns
td(off)
Turn–Off Delay Time
16.5
30
ns
tf
Turn–Off Fall Time
VDD = –30 V,
ID = –1 A,
VGS = –10 V,
RGEN = 6
48
ns
Qg
Total Gate Charge
8.6
13.8
nC
Qgs
Gate–Source Charge
1.5
nC
Qgd
Gate–Drain Charge
VDS = –30 V,
ID = –1.25 A,
VGS = –10 V
1.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.42
(Note 2)
–0.7
–1.2
V
Notes:
1.
R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250
°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
≤=300 µs, Duty Cycle ≤=2.0


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