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FDN361 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN361 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDN361AN, Rev. C FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ ΤΜ ΤΜ ΤΜ ΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. April 1999 Features • 1.8 A, 30 V. R DS(on) = 0.100 Ω @ V GS = 10 V R DS(on) = 0.150 Ω @ V GS = 4.5 V. • Low gate charge ( 2.1nC typical ). • Fast switching speed. • High performance trench technology for extremely low R DS(on) . • High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. 1998 Fairchild Semiconductor Corporation Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter FDN361AN Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous (Note 1a) 1.8 A - Pulsed 8 PD Power Dissipation for Single Operation (Note 1a) 0.5 (Note 1b) 0.46 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 361 FDN361AN 7’’ 8mm 3000 units Applications • DC/DC converter • Load switch • Motor drives D S G G D S SuperSOT -3 TM |
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