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FDN361AN Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN361AN
Description  N-Channel, Logic Level, PowerTrench課?
Download  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN361AN Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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FDN361AN, Rev. C
DMOS Electrical Characteristics
T
A
= 25°C unless otherwise noted
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250
µA30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C24
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA1
1.8
3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C-4.2
mV/
°C
0.072
0.107
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.8 A
VGS = 10 V, ID = 1.8 A, TJ = 125
°C
VGS = 4.5 V, ID = 1.4 A
0.105
0.1
0.16
0.15
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
8
A
gFS
Forward Transconductance
VDS = 10 V, ID = 1.8 A
5
S
Ciss
Input Capacitance
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
220
pF
Coss
Output Capacitance
50
pF
Crss
Reverse Transfer Capacitance
20
pF
td(on)
Turn-On Delay Time
VDD = 15 V, ID = 1 A,
3
6
ns
t
Turn-On Rise Time
VGS = 10 V, RGEN = 6.0
11
22
ns
td(off)
Turn-Off Delay Time
7
14
ns
tf
Turn-Off Fall Time
3
6
ns
Qg
Total Gate Charge
VDS = 15 V, ID = 1.8 A,
2.1
4
nC
Qgs
Gate-Source Charge
VGS = 5 V
0.8
nC
Qgd
Gate-Drain Charge
0.7
nC
IS
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 0.42 A (Note 2)
0.75
1.2
V
Dynamic Characteristics
Switching Characteristics (Note 2)
Off Characteristics
On Characteristics (Note 2)
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) 250
°C/W when mounted
on a 0.02 in2 pad of 2 oz. Cu.
b) 270
°C/W when mounted
on a mininum pad.


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