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FDN361AN Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN361AN Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDN361AN, Rev. C DMOS Electrical Characteristics T A = 25°C unless otherwise noted BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C24 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA1 1.8 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C-4.2 mV/ °C 0.072 0.107 RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.8 A VGS = 10 V, ID = 1.8 A, TJ = 125 °C VGS = 4.5 V, ID = 1.4 A 0.105 0.1 0.16 0.15 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 8 A gFS Forward Transconductance VDS = 10 V, ID = 1.8 A 5 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 220 pF Coss Output Capacitance 50 pF Crss Reverse Transfer Capacitance 20 pF td(on) Turn-On Delay Time VDD = 15 V, ID = 1 A, 3 6 ns t Turn-On Rise Time VGS = 10 V, RGEN = 6.0 Ω 11 22 ns td(off) Turn-Off Delay Time 7 14 ns tf Turn-Off Fall Time 3 6 ns Qg Total Gate Charge VDS = 15 V, ID = 1.8 A, 2.1 4 nC Qgs Gate-Source Charge VGS = 5 V 0.8 nC Qgd Gate-Drain Charge 0.7 nC IS Maximum Continuous Drain-Source Diode Forward Current 0.42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.75 1.2 V Dynamic Characteristics Switching Characteristics (Note 2) Off Characteristics On Characteristics (Note 2) Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions Min Typ Max Units Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 250 °C/W when mounted on a 0.02 in2 pad of 2 oz. Cu. b) 270 °C/W when mounted on a mininum pad. |
Numéro de pièce similaire - FDN361AN |
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Description similaire - FDN361AN |
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