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FDN360 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN360
Description  Single P-Channel PowerTrenchTM MOSFET
Download  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN360 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FDN360 Datasheet HTML 1Page - Fairchild Semiconductor FDN360 Datasheet HTML 2Page - Fairchild Semiconductor FDN360 Datasheet HTML 3Page - Fairchild Semiconductor FDN360 Datasheet HTML 4Page - Fairchild Semiconductor FDN360 Datasheet HTML 5Page - Fairchild Semiconductor FDN360 Datasheet HTML 6Page - Fairchild Semiconductor FDN360 Datasheet HTML 7Page - Fairchild Semiconductor FDN360 Datasheet HTML 8Page - Fairchild Semiconductor  
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FDN360P Rev. D
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
µA-30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250
µA, Referenced to
25
°C
20
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
-1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
µA-1
-1.8
-3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250
µA, Referenced to
25
°C
-4
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -2 A
VGS = -10 V, ID = -2 A, TJ=125
°C
VGS = -4.5 V, ID = -1.5 A
0.060
0.080
0.095
0.080
0.136
0.125
ID(on)
On-State Drain Current
VGS = -10 V, VDS = -5 V
-20
A
gFS
Forward Transconductance
VDS = -5 V, ID = -2 A
5.5
S
Dynamic Characteristics
Ciss
Input Capacitance
420
pF
Coss
Output Capacitance
140
pF
Crss
Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
60
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
9
18
ns
tr
Turn-On Rise Time
8
16
ns
td(off)
Turn-Off Delay Time
18
29
ns
tf
Turn-Off Fall Time
VDD = -15 V, ID = -1 A,
VGS = -10 V, RGEN = 6
612
ns
Qg
Total Gate Charge
5
7
nC
Qgs
Gate-Source Charge
1.7
nC
Qgd
Gate-Drain Charge
VDS = -15 V, ID = -2 A,
VGS = -10 V,
1.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.42
A
VSD
Drain-Source Diode Forward VoltageVGS = 0 V, IS = -0.42 A (Note 2)
-0.75
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) 250
°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
b) 270
°C/W when
mounted on a 0.001 in2
pad of 2 oz. Cu.


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