Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

FDN342P Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN342P
Description  P-Channel 2.5V Specified PowerTrench??MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN342P Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FDN342P Datasheet HTML 1Page - Fairchild Semiconductor FDN342P Datasheet HTML 2Page - Fairchild Semiconductor FDN342P Datasheet HTML 3Page - Fairchild Semiconductor FDN342P Datasheet HTML 4Page - Fairchild Semiconductor FDN342P Datasheet HTML 5Page - Fairchild Semiconductor FDN342P Datasheet HTML 6Page - Fairchild Semiconductor FDN342P Datasheet HTML 7Page - Fairchild Semiconductor FDN342P Datasheet HTML 8Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
FDN342P Rev. B
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
µA
-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250
µA,Referenced to 25°C
-16
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -12 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
µA
-0.6
-1.05
-1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250
µA,Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -2 A
VGS = -4.5 V, ID = -2 A,TJ=125
°C
VGS = -2.5 V, ID = -1.5 A
0.062
0.086
0.099
0.08
0.14
0.13
ID(on)
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
-5
A
gFS
Forward Transconductance
VDS = -5 V, ID = -5 A
7
S
Dynamic Characteristics
Ciss
Input Capacitance
635
pF
Coss
Output Capacitance
175
pF
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V
f = 1.0 MHz
75
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
20
35
ns
tr
Turn-On Rise Time
8
16
ns
td(off)
Turn-Off Delay Time
9
18
ns
tf
Turn-Off Fall Time
VDD = -10 V, ID = -1 A
VGS = -4.5 V, RGEN = 6
19
32
ns
Qg
Total Gate Charge
6.3
9
nC
Qgs
Gate-Source Charge
1.5
nC
Qgd
Gate-Drain Charge
VDS = -10 V, ID = -2 A
VGS = -4.5 V,
1.7
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.42
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = -0.42 A
(Note 2)
-0.7
-1.2
V
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 250°C/Wwhenmounted
on a 0.02 in2pad of 2 oz. Cu.
b) 270°C/Wwhenmounted
on a mininum pad.


Numéro de pièce similaire - FDN342P

FabricantNo de pièceFiches techniqueDescription
logo
TECH PUBLIC Electronics...
FDN342P TECHPUBLIC-FDN342P Datasheet
11Mb / 6P
   P-Channel Enhancement-Mode MOS FETs
More results

Description similaire - FDN342P

FabricantNo de pièceFiches techniqueDescription
logo
Fairchild Semiconductor
FDC634P FAIRCHILD-FDC634P_01 Datasheet
138Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
SI4463DY FAIRCHILD-SI4463DY Datasheet
49Kb / 3P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDC638P FAIRCHILD-FDC638P_01 Datasheet
156Kb / 5P
   P-Channel 2.5V PowerTrench Specified MOSFET
FDN302P FAIRCHILD-FDN302P Datasheet
103Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDR840P FAIRCHILD-FDR840P Datasheet
78Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDC602P FAIRCHILD-FDC602P_01 Datasheet
66Kb / 5P
   P-Channel 2.5V PowerTrench Specified MOSFET
FDW264P FAIRCHILD-FDW264P Datasheet
153Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
SI6463DQ FAIRCHILD-SI6463DQ Datasheet
97Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDS6576 FAIRCHILD-FDS6576_06 Datasheet
451Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
logo
Guangdong Kexin Industr...
KDS6375 KEXIN-KDS6375 Datasheet
66Kb / 2P
   P-Channel 2.5V Specified PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com