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FDN342P Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN342P Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDN342P Rev. B Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C -16 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -12 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.6 -1.05 -1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C 3 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -2 A VGS = -4.5 V, ID = -2 A,TJ=125 °C VGS = -2.5 V, ID = -1.5 A 0.062 0.086 0.099 0.08 0.14 0.13 Ω ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V -5 A gFS Forward Transconductance VDS = -5 V, ID = -5 A 7 S Dynamic Characteristics Ciss Input Capacitance 635 pF Coss Output Capacitance 175 pF Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V f = 1.0 MHz 75 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 20 35 ns tr Turn-On Rise Time 8 16 ns td(off) Turn-Off Delay Time 9 18 ns tf Turn-Off Fall Time VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω 19 32 ns Qg Total Gate Charge 6.3 9 nC Qgs Gate-Source Charge 1.5 nC Qgd Gate-Drain Charge VDS = -10 V, ID = -2 A VGS = -4.5 V, 1.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -0.42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.7 -1.2 V Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 250°C/Wwhenmounted on a 0.02 in2pad of 2 oz. Cu. b) 270°C/Wwhenmounted on a mininum pad. |
Numéro de pièce similaire - FDN342P |
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Description similaire - FDN342P |
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