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FDN342P Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDN342P Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDN342P Rev. B Typical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) I D = -2.0A V GS = -4.5V 0 2 4 6 8 0.4 1.4 2.4 3.4 -VGS, GATE TO SOURCE VOLTAGE (V) T A = -55 oC 25 oC 125 oC V DS = -5V 0 0.1 0.2 0.3 12 345 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -1A T A = 125 oC TA = 25 oC 0 5 10 15 20 01 234 5 -V DS, DRAIN-SOURCE VOLTAGE (V) V GS = -4.5V -2.5V -3.5V -3.0V -2.0V -4.0V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) T A = 125 oC 25 oC -55 oC V GS = 0V 0.8 1 1.2 1.4 1.6 1.8 2 0 4 8 12 16 20 - ID, DRAIN CURRENT (A) VGS = -2.5V -3.5V -4.5V -3.0V -4.0V |
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